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2SJ517
Silicon P Channel MOS FET
REJ03G0874-0400 (Previous: ADE-208-575B) Rev.4.00 Sep 07, 2005
Description
High speed power switching
Features
* Low on-resistance RDS (on) = 0.18 typ. (at VGS = -4 V, ID = -1 A) * Low drive current * High speed switching * 2.5 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
D
3
2
1 G 4
1. Gate 2. Drain 3. Source 4. Drain
S
Note: Marking is "YY". *UPAK is a trademark of Renesas Technology Corp.
Rev.4.00 Sep 07, 2005 page 1 of 6
2SJ517
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value -20 10 -2 -4 -2 1 150 -55 to +150
Unit V V A A A W C C
Pch Tch
Note 2
Storage temperature Tstg Notes: 1. PW 100 s, duty cycle 10% 2. When using the aluminium ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min -20 10 -- -- -0.5 -- -- 1.8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.18 0.27 3.0 320 190 90 14 75 90 90 -0.95 70 Max -- -- -10 10 -1.5 0.24 0.43 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = -20 V, VGS = 0 VGS = 8 V, VDS = 0 ID = -1 mA, VDS = -10 V ID = -1 A, VGS = -4 V Note 3 ID = -1 A, VGS = -2.5 V ID = -1 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VGS = -4 V ID = -1 A RL = 10 IF = -2 A, VGS = 0 IF = -2 A, VGS = 0 diF/dt = 50 A/s
Note 3 Note 3
Rev.4.00 Sep 07, 2005 page 2 of 6
2SJ517
Main Characteristics
Power vs. Temperature Derating
2.0
Maximum Safe Operation Area
-10
10
Pch (W)
ID (A)
Test Condition: When using the aluminum ceramic board (12.5 x 20 x 70 mm)
-3 -1
1.5
PW
s
10
=
10
1
m s
m
0
s
s
Channel Dissipation
Drain Current
D C
-0.3
1.0
O
(1
pe
sh
ra
ot
)
0.5
-0.1 Operation in this area is limited by RDS (on) -0.03 Ta = 25C -0.01 -1 -0.1 -0.3
tio
n
0 0 50 100 150 200
-3
-10
-30
-100
Ambient Temperature
Ta (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
-5 -10 V -5 Pulse Test -2.5 V -4 V -3 V
Typical Transfer Characteristics
VDS = -10 V Pulse Test
ID (A)
ID (A)
-4
-4 -25C -3 25C Tc = 75C
-3
Drain Current
-2
-2 V
Drain Current
-10
-2
-1 VGS = -1.5 V 0 0 -2 -4 -6 -8
-1
0 0
-1
-2
-3
-4
-5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V)
-1.0 Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
1 0.5 VGS = -2.5 V 0.2 0.1 0.05 -4 V
-0.8
-0.6
-0.4 ID = -2 A -0.2 -1 A -0.5 A 0 0 -2 -4 -6 -8 -10
0.02 Pulse Test 0.01 -0.1 -0.2 -0.5
-1
-2
-5
-10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 6
2SJ517
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance RDS (on) ()
0.5 Pulse Test 0.4 VGS = -2.5 V 0.3 -1 A -0.5 A ID = -2 A
10 5 Tc = -25C 25C
2 1 75C 0.5
0.2 -0.5 A, -1 A, -2 A 0.1 -4 V
0.2 0.1 -0.1
VDS = -10 V Pulse Test -0.2 -0.5 -1 -2 -5 -10
0 -40
0
40
80
120
160
Case Temperature
Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
1000 500
Body-Drain Diode Reverse Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50
Ciss 200 100 50 Coss Crss
20 10 5 -0.1 -0.2 di / dt = 50 A / s VGS = 0, Ta = 25C -0.5 -1 -2 -5 -20
20 10
VGS = 0 f = 1 MHz 0 -4 -8 -12 -16 -20
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
VDD = -5 V -10 V -10 VDS -20 VDD = -5 V -10 V VGS -40 -16 -8 -4
VGS (V)
0
0
500
Switching Time t (ns)
200 td(off) 100 50 tf tr
Drain to Source Voltage
-30
-12
Gate to Source Voltage
20 10 5 -0.1 -0.2
td(on) VGS = -4 V, VDD = -10 V duty 1 % -0.5 -1 -2 -5 -10
-50 0 4 8 12 16
-20 20
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 6
2SJ517
Reverse Drain Current vs. Source to Drain Voltage
-5
Reverse Drain Current IDR (A)
-4 -4 V -3
-2 -2.5 V -1
VGS = 0, 5 V
Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage
VSD
(V)
Switching Time Test Circuit
Vin Vin Monitor D.U.T. RL Vout Monitor 10%
Waveform
90% 90% 90%
Vin 4V
50
VDD = -10 V Vout td(on) 10% tr td(off) 10% tf
Rev.4.00 Sep 07, 2005 page 5 of 6
2SJ517
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
0.4
1.8 Max 1
1.5 0.1 0.44 Max
(1.5)
2.5 0.1 4.25 Max
1.5 1.5 3.0
Ordering Information
Part Name 2SJ517YYTL-E 2SJ517YYTR-E 1000 pcs 1000 pcs Quantity Taping Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 07, 2005 page 6 of 6
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
(0.2)
Sales Strategic Planning Div.
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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